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savantic semiconductor product specification silicon pnp power transistors 2SB1162 d escription with to-3pl package complement to type 2sd1717 excellent linearity of h f e wide area of safe operation (aso) high transition frequency f t applications for high power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i cm collector current-peak -20 a 3.5 p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pl) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1162 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-8a ;i b =-0.8a -2.0 v v be base-emitter voltage i c =-8a ; v ce =-5v -1.8 v i cbo collector cut-off current v cb =-160v; i e =0 -50 a i ebo emitter cut-off current v eb =-3v; i c =0 -50 a h fe-1 dc current gain i c =-20ma ; v ce =-5v 20 h fe-2 dc current gain i c =-1a ; v ce =-5v 60 200 h fe-3 dc current gain i c =-8a ; v ce =-5v 20 f t transition frequency i c =-0.5a ; v ce =-5v 20 mhz c ob collector output capacitance f=1mhz;v cb =-10v 210 pf h fe-2 classifications q s p 60-120 80-160 100-200 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1162 package outline fig.2 outline dimensions (unindicated tolerance: 0.50 mm) |
Price & Availability of 2SB1162 |
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